2N5564 TO-71 6L ROHS

LS5564 SERIES MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES Replacement for SILICONIX & NATIONAL: 2N5564 Series ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation (Total)4 500mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -40V Gate to Source -40V MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC VGS1 − VGS2 Differential Gate to Source Cutoff Voltage Differential Gate to Source Voltage Change with Temperature Saturation Drain Current Ratio Δ VGS1 − VGS2 ΔT IDSS1 IDSS2 gfs1 gfs2 CMRR TYP Forward Transconductance Ratio Common Mode Rejection Ratio LS5564 MIN MAX LS5565 MIN MAX LS5566 MIN MAX UNIT CONDITIONS 5 10 20 mV VDG = 15V, ID = 2mA 10 25 50 µV/°C VDG = 15V, ID = 2mA TA = -55 to +125°C 0.95 1 0.95 1 0.95 1 VDS = 15V, VGS = 0V 0.95 1 0.90 1 0.90 1 VDS = 15V, ID = 2mA f = 1kHz3 76 dB VDG = 10V to 20V ID = 2mA STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS5564 LS5565 LS5566 SYM. CHARACTERISTIC TYP UNIT CONDITIONS MIN MAX MIN MAX MIN MAX BVGSS Gate to Source Breakdown Voltage -40 -40 -40 IG = -1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage -0.5 -3.0 -0.5 -3.0 -0.5 -3.0 VDS = 15V, ID = 1nA V VGS(F) Gate to Source Forward Voltage 0.7 1 1 1 IG = 2mA, VDS = 0V VGS Gate to Source Voltage -1.2 VDG = 15V, IG = -2mA IDSS Drain to Source Saturation Current2 7 40 7 40 7 40 mA VDS = 10V, VGS = 0V IGSS Gate Leakage Current -100 -100 -100 VGS = -20V, VDS = 0V pA IG Gate Operating Current -3 VDG = 10V, ID = 5mA RDS(on) Drain-Source on Resistance 50 100 100 100 Ω VGS = 0 V, ID = 1mA IG1/ IG2 Gate to Gate Isolation Current ±1 ±1 ±1 µA VG1-VG2 = ± 80V, ID = IS = 0 Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201187 07/25/2019 Rev#A4 ECN# LS5564 Series DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. gfs CHARACTERISTIC Forward Transconductance gos Output Conductance TYP f = 1kHz 9 LS5564 LS5565 LS5566 MIN MAX MIN MAX MIN MAX 7.5 20 7.5 20 7.5 20 55 f = 100MHz 120 Ciss Input Capacitance 25 Crss Reverse Transfer Capacitance 5.5 NF Noise Figure en Equivalent Input Noise Voltage 100 100 100 1 f = 10Hz 12 50 50 50 CONDITIONS mS f = 100MHz f = 1kHz UNIT VDS = 15V, ID = 2mA µS pF VDS = 15V, ID = 2mA f = 1MHz dB VDS = 15V, ID = 2mA f = 10Hz, RG = 10MΩ nV⁄ √Hz VDS = 15V, ID = 2mA f = 10Hz PACKAGE OPTIONS: DIMENSIONS IN INCHES NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator. 4. Derate 4mW/°C above 25°C. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201187 07/25/2019 Rev#A4 ECN# LS5564 Series